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Freescale Semiconductor Technical Data
Document Number: MRF8S26120H www..com Rev. 0, 6/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA and LTE base station applications with frequencies from 2620 to 2690 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. * Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 900 mA, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency 2620 MHz 2655 MHz 2690 MHz Gps (dB) 15.5 15.5 15.6 D (%) 31.5 31.1 31.1 Output PAR (dB) 6.3 6.3 6.2 ACPR (dBc) --38.0 --37.3 --36.7
MRF8S26120HR3 MRF8S26120HSR3
2620-2690 MHz, 28 W AVG., 28 V W-CDMA, LTE LATERAL N-CHANNEL RF POWER MOSFETs
* Capable of Handling 10:1 VSWR, @ 32 Vdc, 2655 MHz, 135 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) * Typical Pout @ 1 dB Compression Point 110 Watts CW Features * 100% PAR Tested for Guaranteed Output Power Capability * Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters * Internally Matched for Ease of Use * Integrated ESD Protection * Greater Negative Gate--Source Voltage Range for Improved Class C Operation * Designed for Digital Predistortion Error Correction Systems * Optimized for Doherty Applications * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Table 1. Maximum Ratings
Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature CW Operation @ TC = 25C Derate above 25C
(1,2)
CASE 465-06, STYLE 1 NI-780 MRF8S26120HR3
CASE 465A-06, STYLE 1 NI-780S MRF8S26120HSR3
Symbol VDSS VGS VDD Tstg TC TJ CW
Value --0.5, +65 --6.0, +10 32, +0 --65 to +150 150 225 141 0.78
Unit Vdc Vdc Vdc C C C W W/C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 72C, 28 W CW, 28 Vdc, IDQ = 900 mA, 2690 MHz Case Temperature 85C, 110 W CW(4), 28 Vdc, IDQ = 900 mA, 2690 MHz Symbol RJC Value (2,3) 0.53 0.47 Unit C/W
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
(c) Freescale Semiconductor, Inc., 2010. All rights reserved.
MRF8S26120HR3 MRF8S26120HSR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Class 2 (Minimum) A (Minimum) IV (Minimum)
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Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 172 Adc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 900 mAdc, Measured in Functional Test) Drain--Source On--Voltage (VGS = 10 Vdc, ID = 1.7 Adc) VGS(th) VGS(Q) VDS(on) 1.2 1.5 0.1 2.0 2.6 0.24 2.7 3.0 0.3 Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 900 mA, Pout = 28 W Avg., f = 2690 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Drain Efficiency Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Gps D PAR ACPR IRL 14.5 28.0 5.7 -- -- 15.6 31.1 6.2 --36.7 --14 17.5 -- -- --34.5 --9 dB % dB dBc dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 900 mA, Pout = 28 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Frequency 2620 MHz 2655 MHz 2690 MHz 1. Part internally matched both on input and output. Gps (dB) 15.5 15.5 15.6 D (%) 31.5 31.1 31.1 Output PAR (dB) 6.3 6.3 6.2 ACPR (dBc) --38.0 --37.3 --36.7 IRL (dB) --13 --14 --14 (continued)
MRF8S26120HR3 MRF8S26120HSR3 2 RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic Pout @ 1 dB Compression Point, CW IMD Symmetry @ 80 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 70 MHz Bandwidth @ Pout = 28 W Avg. Gain Variation over Temperature (--30C to +85C) Output Power Variation over Temperature (--30C to +85C) (1) Symbol P1dB IMDsym Min -- -- Typ 110 18
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Max -- --
Unit W MHz
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 900 mA, 2620--2690 MHz Bandwidth
VBWres GF G P1dB
-- -- -- --
65 0.1 0.015 0.007
-- -- -- --
MHz dB dB/C dB/C
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
MRF8S26120HR3 MRF8S26120HSR3 RF Device Data Freescale Semiconductor 3
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C7 C2 C3 R1 C1 R2 C4 R3 C12 C5 C13*
C6
CUT OUT AREA
C11*
C16
C15* C10 C8
C14*
MRF8S26120 Rev. 0
C9
*C11, C13, C14, and C15 are mounted vertically.
Figure 1. MRF8S26120HR3(HSR3) Test Circuit Component Layout
Table 5. MRF8S26120HR3(HSR3) Test Circuit Component Designations and Values
Part C1 C2 C3 C4, C5, C8 C6, C9 C7, C10 C11, C12, C13, C14, C15 C16 R1 R2 R3 PCB Description 22 F, 35 V Tantalum Capacitor 330 nF, 100 V Chip Capacitor 15 nF, 100 V Chip Capacitor 2.2 F, 100 V Chip Capacitors 22 F, 50 V Chip Capacitors 470 F, 63 V Electrolytic Capacitors 27 pF Chip Capacitors 0.8 pF Chip Capacitor 1 k, 1/4 W Chip Resistor 10 k, 1/4 W Chip Resistor 7.5 , 1/4 W Chip Resistor 0.030, r = 3.5 Part Number T494X226K035AT C3225X7R2A334KT C3225C0G2A153JT C3225X7R2A225KT C5750JF1H226ZT MCGPR63V477M13X26--RH ATC800B270JT500XT ATC100B0R8BT500XT CRCW12061K00FKEA CRCW120610K0FKEA CRCW12067R50FNEA RF--35 Manufacturer Kemet TDK TDK TDK TDK Multicomp ATC ATC Vishay Vishay Vishay Taconic
MRF8S26120HR3 MRF8S26120HSR3 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
VDD = 28 Vdc, Pout = 28 W (Avg.), IDQ = 900 mA Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF D Gps IRL D, DRAIN EFFICIENCY (%) 16 15.9 15.8 Gps, POWER GAIN (dB) 15.7 15.6 15.5 15.4 15.3 15.2 ACPR PARC 32 31.8 31.6 31.4 31.2 --35 ACPR (dBc) --36 --37 --38 --39 2710 --40 2730 --13 --14 --15 --16 --17 --18
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IRL, INPUT RETURN LOSS (dB)
--1 --1.1 --1.2 --1.3 --1.4 --1.5 PARC (dB)
15.1 15 2570
2590
2610
2630
2650
2670
2690
f, FREQUENCY (MHz)
Figure 2. Output Peak- -Average Ratio Compression (PARC) -toBroadband Performance @ Pout = 28 Watts Avg.
--10 --20 --30 --40 --50 --60 IM7--L IM7--U 1 10 TWO--TONE SPACING (MHz) 100
IMD, INTERMODULATION DISTORTION (dBc)
VDD = 28 Vdc, Pout = 80 W (PEP), IDQ = 900 mA Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 2655 MHz IM3--U IM3--L IM5--L IM5--U
Figure 3. Intermodulation Distortion Products versus Two-Tone Spacing
16.5 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) 16 Gps, POWER GAIN (dB) 15.5 15 14.5 14 13.5 1 ACPR D --1 --2 --3 --4 --5 --1 dB = 25 W --2 dB = 35 W --3 dB = 45 W VDD = 28 Vdc, IDQ = 900 mA, f = 2655 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 10 20 30 40 50 60 Gps PARC 10 0 40 30 20 D, DRAIN EFFICIENCY (%) 0 50 --30 --35 --40 --45 --50 --55 ACPR (dBc) 60 --25
Pout, OUTPUT POWER (WATTS)
Figure 4. Output Peak- -Average Ratio -toCompression (PARC) versus Output Power
MRF8S26120HR3 MRF8S26120HSR3 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
17 16 Gps, POWER GAIN (dB) 15 14 13 12 11 1 VDD = 28 Vdc, IDQ = 900 mA, Single--Carrier W--CDMA Gps 2620 MHz 2655 MHz ACPR 2690 MHz 60 D 50 D, DRAIN EFFICIENCY (%) 40 30 20 2655 MHz 2620 MHz 10 Pout, OUTPUT POWER (WATTS) AVG. 100 10 0 200 0 --10 --20 --30 --40 --50 --60 ACPR (dBc)
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3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 2690 MHz 2655 MHz 2620 MHz 2690 MHz
Figure 5. Single-Carrier W-CDMA Power Gain, Drain Efficiency and ACPR versus Output Power
24 20 16 GAIN (dB) 12 8 4 VDD = 28 Vdc Pin = 0 dBm IDQ = 900 mA 2355 2470 2585 2700 2815 2930 3045 IRL Gain 0 --3 --6 --9 --12 --15 --18 3160 IRL (dB)
0 2240
f, FREQUENCY (MHz)
Figure 6. Broadband Frequency Response
MRF8S26120HR3 MRF8S26120HSR3 6 RF Device Data Freescale Semiconductor
W-CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 Input Signal 0.1 (dB) 0.01 0.001 0.0001 W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 0 1 2 3 4 5 6 7 8 9 10 PEAK--TO--AVERAGE (dB) 10 0 --10 --20 --30 --40 --50 --60 --70 --80 --90 --100 --9 --7.2 --5.4 --3.6 --1.8 0 --ACPR in 3.84 MHz Integrated BW 3.84 MHz Channel BW
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+ACPR in 3.84 MHz Integrated BW
Figure 7. CCDF W-CDMA IQ Magnitude Clipping, Single-Carrier Test Signal
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 8. Single-Carrier W-CDMA Spectrum
MRF8S26120HR3 MRF8S26120HSR3 RF Device Data Freescale Semiconductor 7
VDD = 28 Vdc, IDQ = 900 mA, Pout = 28 W Avg. f MHz 2570 2590 2610 2630 2650 2670 2690 2710 2730 Zsource 5.21 -- j5.62 5.26 -- j5.33 5.31 -- j5.02 5.35 -- j4.71 5.39 -- j4.39 5.46 -- j4.05 5.53 -- j3.77 5.57 -- j3.47 5.59 -- j3.15 Zload 3.17 -- j4.27 3.15 -- j4.20 3.12 -- j4.12 3.10 -- j4.04 3.07 -- j3.96 3.06 -- j3.88 3.06 -- j3.82 3.05 -- j3.77 3.05 -- j3.73
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Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network
Input Matching Network
Z
source
Z
load
Figure 9. Series Equivalent Source and Load Impedance
MRF8S26120HR3 MRF8S26120HSR3 8 RF Device Data Freescale Semiconductor
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD = 28 Vdc, IDQ = 861 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle 57 56 Pout, OUTPUT POWER (dBm) 55 54 53 52 51 50 49 48 47 46 30 31 32 33 34 35 36 37 38 39 40 41 2690 MHz 2620 MHz 2655 MHz Actual 2620 MHz 2690 MHz 2655 MHz Ideal
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Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V f (MHz) 2620 2655 2690 P1dB Watts 149 144 146 dBm 51.7 51.6 51.6 182 177 179 P3dB Watts dBm 52.6 52.5 52.5
Test Impedances per Compression Level f (MHz) 2620 2655 2690 P1dB P1dB P1dB Zsource 5.83 -- j7.00 7.87 -- j6.87 9.46 -- j5.13 Zload 1.44 -- j2.87 1.72 -- j3.15 1.52 -- j3.20
Figure 10. Pulsed CW Output Power versus Input Power @ 28 V
MRF8S26120HR3 MRF8S26120HSR3 RF Device Data Freescale Semiconductor 9
PACKAGE DIMENSIONS
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MRF8S26120HR3 MRF8S26120HSR3 10 RF Device Data Freescale Semiconductor
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MRF8S26120HR3 MRF8S26120HSR3 RF Device Data Freescale Semiconductor 11
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MRF8S26120HR3 MRF8S26120HSR3 12 RF Device Data Freescale Semiconductor
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MRF8S26120HR3 MRF8S26120HSR3 RF Device Data Freescale Semiconductor 13
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents, tools and software to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices Software * Electromigration MTTF Calculator * RF High Power Model * .s2p File
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For Software, do a Part Number search at http://www.freescale.com, and select the "Part Number" link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date June 2010 * Initial Release of Data Sheet Description
MRF8S26120HR3 MRF8S26120HSR3 14 RF Device Data Freescale Semiconductor
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MRF8S26120HR3 MRF8S26120HSR3
Document Number: RF Device Data MRF8S26120H Rev. 0, 6/2010 Freescale Semiconductor
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